creat by art - especially suited as boost diode on continuous mode power factor correctors - ideal solution for hard switching condition - high capability for high di/dt operation. downsizing of mosfet and heatsink - high surge current capability - aec-q101 qualified (green compound not involved) - halogen-free according to iec 61249-2-21 definition molding compound, ul flammability classification rating 94v-0 base p/n with suffix "g" on packing code - halogen-free terminal: matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 1a whisker test v rrm v i f(av) a qrr nc i rm a r jc o c/w t j o c t stg o c document number: ds_d1312023 version: a13 UGF8JD taiwan semiconductor isolated ultra fast rectifier features - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec mechanical data ito-220ac description especially suited as free wheeling or boost diode in continuous mode power factor correctors and other power switching applications. the low stored charge and ultrafast soft recovery minimizes ringing and electrical noise in power switching circuits. the family drastically cuts losses in the associated mosfet when run at high d if /dt. case: ito-220ac polarity: as marked mounting torque: 5 in-lbs maximum weight: 1.7g (approximately) unit maximum repetitive peak reverse voltage maximum average forward rectified current 8.0 maximum ratings and electrical characteristics (t a =25 unless otherwise noted) parameter symbol UGF8JD 600 v 55.5 maximum instantaneous forward voltage (note 1) i f = 8 a v f peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load i fsm 100 a i f =1a, di f /dt=-200a/us, v r =400v, t j =125 maximum reverse current @ rated v r t j =25 t j =125 i r 0.5 a i f =0.5a, i rr =0.25a, i r =1a, t j =25 - ns 2.3 100 reverse recovery time i f =1a, di f /dt=-50a/us, v r =30v, t j =25 trr typ max 13 -30 storage temperature range - 55 to +150 note 1: pulse test with pw=300 s, 1% duty cycle typical thermal resistance 4 operating junction temperature range - 55 to +150 reverse recovery charges typ max i f =1a, di f /dt=-200a/us, v r =400v, t j =125 90 -
part no. part no. UGF8JD UGF8JD (ta=25 unless otherwise noted) document number: ds_d1312023 version: a13 ito-220ac green compound code green compound description 50 / tube UGF8JD taiwan semiconductor ordering information packing code green compound code c0 g example preferred p/n packing code packing ratings and characteristics curves UGF8JD c0 c0 UGF8JD c0g package UGF8JD c0 suffix "g" 0 2 4 6 8 10 0 25 50 75 100 125 150 average forward current (a) case temperature ( ) fig.1 maximum forward current derating curve resistive or inductive load with heatsink 0 10 20 30 40 50 60 70 80 90 100 110100 peak forward surge current (a) number of cycles at 60 hz fig. 2 maximum forward surge current 8.3ms single half sine wave 0.01 0.1 1 10 100 10 20 30 40 50 60 70 80 90 100 instantantaneous reverse current ( a) percent of rated peak reverse voltage(%) fig. 4 typical reverse characteristics tj=25 tj=125 0.1 1 10 100 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 instantaneous forward current (a) forward voltage (v) fig. 3 typical forward characteristics tj=25 tj=125
min max min max a 4.30 4.70 0.169 0.185 b 2.50 3.10 0.098 0.122 c 2.30 2.90 0.091 0.114 d 0.46 0.76 0.018 0.030 e 6.30 6.90 0.248 0.272 f 9.60 10.30 0.378 0.406 g 3.00 3.40 0.118 0.134 h 0.00 1.60 0.000 0.063 i 0.95 1.45 0.037 0.057 j 0.50 0.90 0.020 0.035 k 2.40 3.20 0.094 0.126 l 14.80 15.50 0.583 0.610 m - 4.10 - 0.161 n - 1.80 - 0.071 o 12.60 13.80 0.496 0.543 p 4.95 5.20 0.195 0.205 p/n = specific device code g = green compound yww = date code f = factory code document number: ds_d1312023 version: a13 marking diagram UGF8JD taiwan semiconductor package outline dimensions dim. unit (mm) unit (inch) 10 100 0.1 1 10 100 capacitance (pf) reverse voltage (v) fig. 5 typical junction capacitance f=1.0mhz vslg=50mvp-p
creat by art assumes no responsibility or liability for any errors inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied,to any intellectual property rights is granted by this document. except as provided in tsc's terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale. document number: ds_d1312023 version: a13 UGF8JD taiwan semiconductor notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf,
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